Invention Grant
- Patent Title: Semiconductor light emitting element and light emitting device using this
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Application No.: US10491411Application Date: 2002-09-27
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Publication No.: US07170221B2Publication Date: 2007-01-30
- Inventor: Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara
- Applicant: Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2001-305032 20011001
- International Application: PCT/JP02/10128 WO 20020927
- International Announcement: WO03/032407 WO 20030417
- Main IPC: H01J1/63
- IPC: H01J1/63 ; H01L31/055

Abstract:
The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.
Public/Granted literature
- US07294956B2 Semiconductor light emitting element and light emitting device using this Public/Granted day:2007-11-13
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