发明授权
US07173180B2 Silane composition, silicon film forming method and solar cell production method
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硅烷组成,硅膜形成方法和太阳能电池的制备方法
- 专利标题: Silane composition, silicon film forming method and solar cell production method
- 专利标题(中): 硅烷组成,硅膜形成方法和太阳能电池的制备方法
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申请号: US11404921申请日: 2006-04-17
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公开(公告)号: US07173180B2公开(公告)日: 2007-02-06
- 发明人: Hiroshi Shiho , Hitoshi Kato
- 申请人: Hiroshi Shiho , Hitoshi Kato
- 申请人地址: JP Tokyo
- 专利权人: JSR Corporation
- 当前专利权人: JSR Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2001-245947 20010814; JP2001-319304 20011017; JP2001-375992 20011210
- 主分类号: H01L31/0256
- IPC分类号: H01L31/0256
摘要:
A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.
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