Invention Grant
US07173846B2 Magnetic RAM and array architecture using a two transistor, one MTJ cell
有权
磁性RAM和阵列架构使用两个晶体管，一个MTJ单元
- Patent Title: Magnetic RAM and array architecture using a two transistor, one MTJ cell
- Patent Title (中): 磁性RAM和阵列架构使用两个晶体管，一个MTJ单元
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Application No.: US10366499Application Date: 2003-02-13
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Publication No.: US07173846B2Publication Date: 2007-02-06
- Inventor: Wen-Chin Lin , Denny D. Tang , Yu Der Chih
- Applicant: Wen-Chin Lin , Denny D. Tang , Yu Der Chih
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A new magnetic RAM cell device is achieved. The device comprisese, first, a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A reading switch is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.
Public/Granted literature
- US20040160809A1 Magnetic RAM and array architecture using a two transistor, one MTJ cell Public/Granted day:2004-08-19
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