According to some embodiments, a nonvolatile semiconductor memory device includes high voltage circuits that prevent high voltages, which are applied to bitlines during an erase operation, from being applied to low voltage circuits that are operable with low voltages. Each high voltage circuit includes a first switching circuit for selectively isolating the low voltage circuit from the bitlines, and a second switching circuit for inhibiting a leakage current to the low voltage circuit from the bitlines. The second switching circuit is connected between the first switching circuit and the low voltage circuit.