发明授权
US07173872B2 Method and apparatus for controlling a high voltage generator in a wafer burn-in test
有权
用于在晶片老化测试中控制高压发生器的方法和装置
- 专利标题： Method and apparatus for controlling a high voltage generator in a wafer burn-in test
- 专利标题（中）： 用于在晶片老化测试中控制高压发生器的方法和装置
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申请号： US11327104申请日： 2006-01-05
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公开(公告)号： US07173872B2公开(公告)日： 2007-02-06
- 发明人: Choong-Sun Park , Hyung-Dong Kim , Sang-Seok Kang , Jong-Hyun Choi , Yong-Hwan Jung
- 申请人： Choong-Sun Park , Hyung-Dong Kim , Sang-Seok Kang , Jong-Hyun Choi , Yong-Hwan Jung
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR2002-23042 20020426; KR2002-54429 20020910
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C8/00
摘要：
The invention relates to a method and apparatus for controlling a high voltage generator during wafer burn-in. The method includes generating an enable signal for enabling a high voltage generator responsive to a mode signal, e.g., a wafer burn-in test mode. The method provides an external voltage to a semiconductor memory device through a pad responsive to the enable signal. The method varies a high voltage level being output from the high voltage generator in response to a reference voltage level.