发明授权
- 专利标题： Diode circuit and method of producing a diode circuit
- 专利标题（中）： 二极管电路及二极管电路的制造方法
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申请号： US10865509申请日： 2004-06-10
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公开(公告)号： US07176546B2公开(公告)日： 2007-02-13
- 发明人: Carsten Ahrens , Wolfgang Hartung , Holger Heuermann , Reinhard Losehand , Josef-Paul Schaffer
- 申请人： Carsten Ahrens , Wolfgang Hartung , Holger Heuermann , Reinhard Losehand , Josef-Paul Schaffer
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Maginot Moore & Beck
- 优先权： DE10160829 20011211
- 主分类号： H01L31/075
- IPC分类号： H01L31/075
摘要：
A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.
公开/授权文献
- US20050040430A1 Diode circuit and method of producing a diode circuit 公开/授权日：2005-02-24