发明授权
- 专利标题: Photocathode plate and electron tube
- 专利标题(中): 光电阴极板和电子管
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申请号: US10969319申请日: 2004-10-21
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公开(公告)号: US07176625B2公开(公告)日: 2007-02-13
- 发明人: Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
- 申请人: Tomoko Mochizuki , Minoru Niigaki , Toru Hirohata , Kuniyoshi Mori
- 申请人地址: JP Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JPP2004-237661 20040817
- 主分类号: H01J40/06
- IPC分类号: H01J40/06
摘要:
Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate.In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.
公开/授权文献
- US20060038473A1 Photocathode plate and electron tube 公开/授权日:2006-02-23