发明授权
- 专利标题： Secure EEPROM memory comprising an error correction circuit
- 专利标题（中）： 安全EEPROM存储器，包括纠错电路
-
申请号： US10317005申请日： 2002-12-11
-
公开(公告)号： US07178067B2公开(公告)日： 2007-02-13
- 发明人: Sylvie Wuidart
- 申请人： Sylvie Wuidart
- 申请人地址： FR Montrouge
- 专利权人： STMicroelectronics SA
- 当前专利权人： STMicroelectronics SA
- 当前专利权人地址： FR Montrouge
- 代理机构： Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- 代理商 Lisa K. Jorgenson
- 优先权： FR0007479 20000613
- 主分类号： G06F11/00
- IPC分类号： G06F11/00
摘要：
An electrically erasable and programmable memory includes at least one non-erasable secured zone. Detection and/or correction of read errors in the secured zone is provided by recording redundant bits in the secured zone and delivering an error signal and/or a bit having the majority value when the redundant bits read in the secured zone are not equal.