发明授权
- 专利标题: Method of fabricating a polycrystalline film by crystallizing an amorphous film with laser light
- 专利标题(中): 通过用激光结晶非晶膜制造多晶膜的方法
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申请号: US10529373申请日: 2004-08-17
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公开(公告)号: US07179725B2公开(公告)日: 2007-02-20
- 发明人: Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
- 申请人: Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2003-298648 20030822
- 国际申请: PCT/JP2004/011762 WO 20040817
- 国际公布: WO2005/020300 WO 20050303
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
公开/授权文献
- US20060141683A1 Production method for thin-film semiconductor 公开/授权日:2006-06-29