发明授权
- 专利标题: Nitride-based light emitting device and method of manufacturing the same
- 专利标题(中): 氮化物基发光器件及其制造方法
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申请号: US10957704申请日: 2004-10-05
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公开(公告)号: US07180094B2公开(公告)日: 2007-02-20
- 发明人: Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
- 申请人: Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
- 申请人地址: KR Suwon-si KR Gwangju-si
- 专利权人: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- 当前专利权人: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- 当前专利权人地址: KR Suwon-si KR Gwangju-si
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: KR10-2003-0069995 20031008
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.