发明授权
- 专利标题： Epitaxially grown fin for FinFET
- 专利标题（中）： FinFET的外延生长鳍
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申请号： US10975475申请日： 2004-10-29
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公开(公告)号： US07183152B1公开(公告)日： 2007-02-27
- 发明人: Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
- 申请人： Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/00 ; H01L21/84 ; H01L21/3205
摘要：
A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.