发明授权
- 专利标题： Methods for forming small contacts
- 专利标题（中）： 形成小触点的方法
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申请号： US10728909申请日： 2003-12-08
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公开(公告)号： US07183223B1公开(公告)日： 2007-02-27
- 发明人: Cyrus E. Tabery , Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
- 申请人： Cyrus E. Tabery , Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder, LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.
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