Invention Grant
- Patent Title: High dielectric constant device
- Patent Title (中): 高介电常数器件
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Application No.: US10459360Application Date: 2003-06-10
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Publication No.: US07183604B2Publication Date: 2007-02-27
- Inventor: Eduard Cartier , Jerry Chen , Chao Zhao
- Applicant: Eduard Cartier , Jerry Chen , Chao Zhao
- Applicant Address: BE Leuven
- Assignee: Interuniversitair Microelektronica Centrum (IMEC vzw)
- Current Assignee: Interuniversitair Microelektronica Centrum (IMEC vzw)
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
Dielectric material compositions comprising HfO2 and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.
Public/Granted literature
- US20040028952A1 High dielectric constant composition and method of making same Public/Granted day:2004-02-12
Information query
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