Invention Grant
- Patent Title: Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device
- Patent Title (中): 在磁性隧道结装置中制造组成调制电极的方法
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Application No.: US10769107Application Date: 2004-01-30
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Publication No.: US07186571B2Publication Date: 2007-03-06
- Inventor: Heon Lee , Manish Sharma
- Applicant: Heon Lee , Manish Sharma
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a higher resistivity than the electrode. As a result, a current flowing through the electrode generates joule heating in the high resistivity region and that joule heating increases a temperature of the data layer and reduces a coercivity of the data layer. Consequently, a magnitude of a switching field required to rotate an alterable orientation of magnetization of the data layer is reduced. The high resistivity region can be fabricated using a plasma oxidation, a plasma nitridation, a plasma carburization, or an alloying process.
Public/Granted literature
- US20050170533A1 Magnetic tunnel junction device with a compositionally modulated electrode Public/Granted day:2005-08-04
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