发明授权
- 专利标题： Plasma etching method
- 专利标题（中）： 等离子蚀刻法
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申请号： US11063180申请日： 2005-02-23
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公开(公告)号： US07186659B2公开(公告)日： 2007-03-06
- 发明人: Kotaro Fujimoto , Takeshi Shimada
- 申请人： Kotaro Fujimoto , Takeshi Shimada
- 申请人地址： JP Tokyo
- 专利权人： Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout and Kraus, LLP.
- 优先权： JP2004-309506 20041025
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3065
摘要：
The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.
公开/授权文献
- US20060086692A1 Plasma etching method 公开/授权日：2006-04-27
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