发明授权
US07187035B2 Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate
有权
半导体器件包括形成在半导体衬底上的具有沟槽的多层
- 专利标题： Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate
- 专利标题（中）： 半导体器件包括形成在半导体衬底上的具有沟槽的多层
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申请号： US10237206申请日： 2002-09-09
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公开(公告)号： US07187035B2公开(公告)日： 2007-03-06
- 发明人: Hajime Nagano , Takashi Yamada , Tsutomu Sato , Ichiro Mizushima , Hisato Oyamatsu
- 申请人： Hajime Nagano , Takashi Yamada , Tsutomu Sato , Ichiro Mizushima , Hisato Oyamatsu
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2001-293781 20010926
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A method of manufacturing a semiconductor device substrate is disclosed, which comprises forming a mask layer patterned on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the insulating layer, etching a protective layer deposited thinner on the semiconductor substrate than the thickness of the insulating layer to form a sidewall protective film which covers a side surface of the trench, etching the insulating layer from a bottom surface of the trench to the semiconductor substrate; and growing a single-crystalline layer from the surface of the semiconductor substrate exposed as a result of etching the insulating layer.