Invention Grant
US07189332B2 Apparatus and method for detecting an endpoint in a vapor phase etch
有权
用于检测气相蚀刻中的端点的装置和方法
- Patent Title: Apparatus and method for detecting an endpoint in a vapor phase etch
- Patent Title (中): 用于检测气相蚀刻中的端点的装置和方法
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Application No.: US10269149Application Date: 2002-10-11
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Publication No.: US07189332B2Publication Date: 2007-03-13
- Inventor: Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
- Applicant: Satyadev R. Patel , Gregory P. Schaadt , Douglas B. MacDonald , Niles K. MacDonald , Hongqin Shi
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent W. James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: C23F3/12
- IPC: C23F3/12

Abstract:
Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.
Public/Granted literature
- US20040069747A1 Apparatus and method for detecting an endpoint in a vapor phase etch Public/Granted day:2004-04-15
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