发明授权
- 专利标题： GaN LED with solderable backside metal
- 专利标题（中）： 具有可焊接背面金属的GaN LED
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申请号： US10874104申请日： 2004-06-22
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公开(公告)号： US07190005B2公开(公告)日： 2007-03-13
- 发明人: Shawn R. Gibb , Robert F. Karlicek , Prosanto K. Mukerji , Hari S. Venugopalan , Ivan Eliashevich
- 申请人： Shawn R. Gibb , Robert F. Karlicek , Prosanto K. Mukerji , Hari S. Venugopalan , Ivan Eliashevich
- 申请人地址： US OH Valley View
- 专利权人： GELcore, LLC
- 当前专利权人： GELcore, LLC
- 当前专利权人地址： US OH Valley View
- 代理机构： Fay Sharpe LLP
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/76
摘要：
A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).
公开/授权文献
- US20040232439A1 GaN LED with solderable backside metal 公开/授权日：2004-11-25
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