发明授权
- 专利标题： Polysilicon thin film fabrication method
- 专利标题（中）： 多晶硅薄膜制造方法
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申请号： US11231854申请日： 2005-09-22
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公开(公告)号： US07192818B1公开(公告)日： 2007-03-20
- 发明人: Si-Chen Lee , Chao-Yu Meng , Hsu-Yu Chang
- 申请人： Si-Chen Lee , Chao-Yu Meng , Hsu-Yu Chang
- 申请人地址： TW Taipei
- 专利权人： National Taiwan University
- 当前专利权人： National Taiwan University
- 当前专利权人地址： TW Taipei
- 代理机构： Rosenberg, Klein & Lee
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/336 ; H01L21/20
摘要：
A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.
公开/授权文献
- US20070065998A1 POLYSILICON THIN FILM FABRICATION METHOD 公开/授权日：2007-03-22
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