发明授权
US07192881B2 Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity
有权
通过增加蚀刻选择性来形成用于电路元件的侧壁间隔元件的方法
- 专利标题： Method of forming sidewall spacer elements for a circuit element by increasing an etch selectivity
- 专利标题（中）： 通过增加蚀刻选择性来形成用于电路元件的侧壁间隔元件的方法
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申请号： US10987466申请日： 2004-11-12
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公开(公告)号： US07192881B2公开(公告)日： 2007-03-20
- 发明人: Thorsten Kammler , Karsten Wieczorek , Christoph Schwan
- 申请人： Thorsten Kammler , Karsten Wieczorek , Christoph Schwan
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE10355575 20031128
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
By heat treating a silicon dioxide liner prior to patterning a silicon nitride spacer layer, the etch selectivity of the silicon dioxide with respect to the silicon nitride is increased, thereby reducing or eliminating the problem of pitting through the silicon dioxide layer. This allows further scaling of the devices, wherein an extremely thin silicon dioxide liner is required to obtain an accurate lateral patterning of the dopant profile in the drain and source regions.
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