Invention Grant
- Patent Title: Semiconductor devices and substrates used in thereof
- Patent Title (中): 其中使用的半导体器件和衬底
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Application No.: US10341339Application Date: 2003-01-14
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Publication No.: US07193314B2Publication Date: 2007-03-20
- Inventor: Wei Feng Lin , Chung Ju Wu , Wen-Yu Lo , Wen-Dong Yen
- Applicant: Wei Feng Lin , Chung Ju Wu , Wen-Yu Lo , Wen-Dong Yen
- Applicant Address: TW Hsin Chu
- Assignee: Silicon Integrated Systems Corp.
- Current Assignee: Silicon Integrated Systems Corp.
- Current Assignee Address: TW Hsin Chu
- Agency: Birch, Stewart, Kolasch and Birch, LLP
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/48

Abstract:
A substrate used in a semiconductor device. The substrate includes a first wiring layer, a second wiring layer, and an interconnection-wiring layer. The first wiring layer includes a plurality of first pads, and the second wiring layer includes a plurality of second pads. The interconnection-wiring layer is set between the first and second wiring layer. In this case, at least one of the second pads that does not electrically connect to anyone of the first pads electrically connects to the interconnection-wiring layer. In another case, a shielding portion, which electrically connects the interconnection-wiring layer, is provided around the second pad that doesn't electrically connect to anyone of the first pads. Furthermore, this invention also discloses a semiconductor device including the substrate.
Public/Granted literature
- US20040135249A1 Semiconductor devices and substrates used in thereof Public/Granted day:2004-07-15
Information query
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