发明授权
- 专利标题: Light emitting device and method of manufacturing the same
- 专利标题(中): 发光元件及其制造方法
-
申请号: US10255449申请日: 2002-09-26
-
公开(公告)号: US07193359B2公开(公告)日: 2007-03-20
- 发明人: Satoshi Seo , Yasuo Nakamura
- 申请人: Satoshi Seo , Yasuo Nakamura
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.
- 优先权: JP2001-304600 20010928
- 主分类号: H01L51/30
- IPC分类号: H01L51/30 ; H01L51/00
摘要:
A measure for improving the light emission efficiency of a light emitting element without degrading characteristics of anode materials used in prior art is provided in manufacture of an upward emission type light emitting element. The present invention is characterized in that nitride or carbide of a metal element belonging to one of Group 4, 5, and 6 in the periodic table (hereinafter referred to as metal compound) is used as the material for forming an anode of a light emitting element. The metal compound has a work function equal to or larger than the work function of conventional anode materials. Therefore, injection of holes from the anode can be improved ever more. Also, with regard to conductivity, the metal compound is smaller in resistivity than ITO. It therefore can fulfil the function as a wire and can lower the drive voltage in the light emitting element compared to prior art.