发明授权
US07194014B2 Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module
有权
半导体激光器件，半导体激光器模块和使用半导体激光器模块的光纤放大器
- 专利标题： Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module
- 专利标题（中）： 半导体激光器件，半导体激光器模块和使用半导体激光器模块的光纤放大器
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申请号： US10748159申请日： 2003-12-31
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公开(公告)号： US07194014B2公开(公告)日： 2007-03-20
- 发明人: Junji Yoshida , Naoki Tsukiji , Toshio Kimura , Masashi Nakae , Takeshi Aikiyo
- 申请人： Junji Yoshida , Naoki Tsukiji , Toshio Kimura , Masashi Nakae , Takeshi Aikiyo
- 申请人地址： JP Tokyo
- 专利权人： The Furukawa Electric Co., Ltd.
- 当前专利权人： The Furukawa Electric Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-201513 20010702; JP2001-304435 20010928; JP2001-325706 20011023; JP2002-112643 20020415
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S3/14
摘要：
A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.
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