发明授权
US07195947B2 Photodiode with self-aligned implants for high quantum efficiency and method of formation
有权
具有自对准植入物的光电二极管，用于高量子效率和形成方法
- 专利标题： Photodiode with self-aligned implants for high quantum efficiency and method of formation
- 专利标题（中）： 具有自对准植入物的光电二极管，用于高量子效率和形成方法
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申请号： US11206125申请日： 2005-08-18
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公开(公告)号： US07195947B2公开(公告)日： 2007-03-27
- 发明人: Chandra Mouli , Howard Rhodes
- 申请人： Chandra Mouli , Howard Rhodes
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L21/10
- IPC分类号： H01L21/10
摘要：
A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.