发明授权
- 专利标题: Semiconductor memory device and method for writing and reading data
- 专利标题(中): 半导体存储器件及数据读写方法
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申请号: US10798469申请日: 2004-03-11
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公开(公告)号: US07196941B2公开(公告)日: 2007-03-27
- 发明人: Yun-Sang Lee , Jung-Bae Lee , Jung-Hwan Choi
- 申请人: Yun-Sang Lee , Jung-Bae Lee , Jung-Hwan Choi
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello LLP
- 优先权: KR10-2003-0032053 20030520
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
A semiconductor memory device and a method for writing and reading data to and from the same comprises a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit line pairs, a predetermined number of write line pairs, a predetermined number of read line pairs, a plurality of write column selection gates for transmitting data between the plurality of bit line pairs and the predetermined number of write line pair during a write operation, and a plurality of read column selection gates for transmitting data between the plurality of bit line pairs and the predetermined number of read line pairs during a read operation. Accordingly, it is possible to input and output data simultaneously through data input pads and data output pads.
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