发明授权
US07196947B2 Random access memory having voltage provided out of boosted supply voltage
有权
随机存取存储器具有由升压的电源电压提供的电压
- 专利标题： Random access memory having voltage provided out of boosted supply voltage
- 专利标题（中）： 随机存取存储器具有由升压的电源电压提供的电压
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申请号： US11153969申请日： 2005-06-16
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公开(公告)号： US07196947B2公开(公告)日： 2007-03-27
- 发明人: Helmut Seitz
- 申请人： Helmut Seitz
- 申请人地址： US CA San Jose
- 专利权人： Infineon Technologies North America Corp.
- 当前专利权人： Infineon Technologies North America Corp.
- 当前专利权人地址： US CA San Jose
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A random access memory including an array of single transistor memory cells and a voltage source. The voltage source is configured to receive a boosted supply voltage and a reference voltage. The voltage source is configured to provide an output voltage out of the boosted supply voltage and based on the reference voltage.
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