Invention Grant
- Patent Title: Semiconductor laser apparatus
- Patent Title (中): 半导体激光装置
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Application No.: US11018573Application Date: 2004-12-22
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Publication No.: US07197058B2Publication Date: 2007-03-27
- Inventor: Xin Gao , Yujin Zheng
- Applicant: Xin Gao , Yujin Zheng
- Applicant Address: JP Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2003-427804 20031224
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/08 ; H01S3/082

Abstract:
A semiconductor laser apparatus capable of reducing a spread angle of emission light with downsizing has an active region between first and second end surfaces. A first reflection structure and a partial reflection structure are provided on the first end surface side. The end surface of the active region is divided into a total reflection region and a partial reflection region in combination with the first reflection structure and partial reflection structure. A laser resonator includes the first reflection structure and partial reflection structure. A second reflection structure is positioned on the way of a resonance optical path of the laser resonator. Light emitted within the active region propagates on a resonance optical path. An induction emission is produced. The semiconductor laser carries out a laser oscillation. Of the light arriving at the partial reflection structure, the portion transmitted through the partial reflection structure is outputted outside the apparatus.
Public/Granted literature
- US20050169335A1 Semiconductor laser apparatus Public/Granted day:2005-08-04
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