发明授权
- 专利标题： Laser resist transfer for microfabrication of electronic devices
- 专利标题（中）： 激光抗蚀剂转移用于电子设备的微细加工
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申请号： US11240964申请日： 2005-09-30
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公开(公告)号： US07198879B1公开(公告)日： 2007-04-03
- 发明人: Timothy J. Tredwell , Lee W. Tutt , David B. Kay , Yongtaek Hong , Glenn T. Pearce , Scott E. Phillips
- 申请人： Timothy J. Tredwell , Lee W. Tutt , David B. Kay , Yongtaek Hong , Glenn T. Pearce , Scott E. Phillips
- 申请人地址： US NY Rochester
- 专利权人： Eastman Kodak Company
- 当前专利权人： Eastman Kodak Company
- 当前专利权人地址： US NY Rochester
- 代理商 Nelson Adrian Blish
- 主分类号： G03F7/34
- IPC分类号： G03F7/34 ; G03F7/38
摘要：
A method for forming a resist pattern on a substrate (18) places a donor element (12) having a layer of thermoresist material proximate the substrate. A gap is maintained such that the surface of the layer of thermoresist material is spaced apart from the surface of the substrate by a number of spacing elements. Thermal energy is directed toward the donor element (12) according to the resist pattern, whereby a portion of thermoresist material is transferred from the donor element (12) across the gap by ablative transfer and is deposited onto the substrate (18) forming the resist pattern.