发明授权
- 专利标题： Method for making a FET channel
- 专利标题（中）： 制造FET通道的方法
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申请号： US11137811申请日： 2005-05-24
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公开(公告)号： US07198990B2公开(公告)日： 2007-04-03
- 发明人: Rajiv V. Joshi , Richard Q. Williams
- 申请人： Rajiv V. Joshi , Richard Q. Williams
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Harrington & Smith, LLP
- 主分类号： H01L21/335
- IPC分类号： H01L21/335
摘要：
A channel 16 of a FinFET 10 has a channel core 24 and a channel envelope 32, each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixGe1-x, wherein 78
公开/授权文献
- US20050218427A1 Method for making a FET channel 公开/授权日：2005-10-06
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