发明授权
- 专利标题： Nonvolatile memory using a two-step cell verification process
- 专利标题（中）： 非易失性存储器使用两步细胞验证过程
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申请号： US11141145申请日： 2005-05-31
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公开(公告)号： US07200043B2公开(公告)日： 2007-04-03
- 发明人: Chung-Zen Chen
- 申请人： Chung-Zen Chen
- 申请人地址： TW Hsinchu
- 专利权人： Elite Semiconductor Memory Technology, Inc.
- 当前专利权人： Elite Semiconductor Memory Technology, Inc.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hogan & Hartson LLP
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A nonvolatile memory comprises a plurality of memory cells, a bit line control circuit and a verifying circuit. The bit line control circuit includes a driving circuit and a non-driving circuit. The verifying circuit verifies a first threshold voltage of the memory cell when the driving circuit drives the memory cell. The verifying circuit also verifies a second threshold voltage when the driving circuit does not drive the memory cell.
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