Invention Grant
- Patent Title: Method of forming a diffusion barrier
- Patent Title (中): 形成扩散阻挡层的方法
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Application No.: US10946310Application Date: 2004-09-22
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Publication No.: US07202167B2Publication Date: 2007-04-10
- Inventor: Knut Beekmann , Kathrine Giles
- Applicant: Knut Beekmann , Kathrine Giles
- Applicant Address: GB Newport, Gwent
- Assignee: Aviza Technology Limited
- Current Assignee: Aviza Technology Limited
- Current Assignee Address: GB Newport, Gwent
- Agency: Volentine & Whitt, PLLC
- Priority: GB0129567.4 20011211
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
Public/Granted literature
- US20050042887A1 Diffusion barrier Public/Granted day:2005-02-24
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