发明授权
US07202513B1 Stress engineering using dual pad nitride with selective SOI device architecture
有权
使用双衬垫氮化物的应力工程与选择性SOI器件架构
- 专利标题： Stress engineering using dual pad nitride with selective SOI device architecture
- 专利标题（中）： 使用双衬垫氮化物的应力工程与选择性SOI器件架构
-
申请号： US11162953申请日： 2005-09-29
-
公开(公告)号： US07202513B1公开(公告)日： 2007-04-10
- 发明人: Dureseti Chidambarrao , William K. Henson , Kern Rim , William C. Wille
- 申请人： Dureseti Chidambarrao , William K. Henson , Kern Rim , William C. Wille
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.
公开/授权文献
信息查询
IPC分类:
