发明授权
- 专利标题: Semiconductor storage device and mobile electronic device
- 专利标题(中): 半导体存储设备和移动电子设备
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申请号: US10528997申请日: 2003-09-10
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公开(公告)号: US07203118B2公开(公告)日: 2007-04-10
- 发明人: Yoshifumi Yaoi , Hiroshi Iwata , Akihide Shibata , Masaru Nawaki , Kei Tokui
- 申请人: Yoshifumi Yaoi , Hiroshi Iwata , Akihide Shibata , Masaru Nawaki , Kei Tokui
- 申请人地址: JP Osaka-shi
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Osaka-shi
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2002-280806 20020926; JP2003-142146 20030520
- 国际申请: PCT/JP03/11559 WO 20030910
- 国际公布: WO2004/029985 WO 20040408
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
When an input voltage determining circuit 24 determines that an input voltage exceeds a prescribed voltage, a control circuit 25 of a positive polarity power selector circuit 22 turns on a first switch SW1 and turns off second and third switches SW2 and SW3, thereby supplying the input voltage to a memory cell array 21 via the first switch SW1. When the input voltage determining circuit 24 determines that the input voltage is not higher than the prescribed voltage, the control circuit 25 turns off the first switch SW1 and turns on the second and third switches SW2 and SW3, thereby supplying a voltage from a charge pump 23 via the second and third switches SW2 and SW3. By this operation, the memory element is able to retain storage of two bits or more even if miniaturized, to execute stable operation with a small circuit area and to prevent circuit malfunction attributed to a small current supplied to the memory cell array.
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