Invention Grant
- Patent Title: Atomic layer deposition of hafnium-based high-k dielectric
- Patent Title (中): 铪基高k电介质的原子层沉积
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Application No.: US10954819Application Date: 2004-09-29
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Publication No.: US07205247B2Publication Date: 2007-04-17
- Inventor: Sang-In Lee , Jon S. Owyang , Yoshihide Senzaki , Aubrey L. Helms, Jr. , Karem Kapkin
- Applicant: Sang-In Lee , Jon S. Owyang , Yoshihide Senzaki , Aubrey L. Helms, Jr. , Karem Kapkin
- Applicant Address: US CA Scotts Valley
- Assignee: Aviza Technology, Inc.
- Current Assignee: Aviza Technology, Inc.
- Current Assignee Address: US CA Scotts Valley
- Agency: Morgan Lewis & Bockius LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
Public/Granted literature
- US20050235905A1 Atomic layer deposition of hafnium-based high-k dielectric Public/Granted day:2005-10-27
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