发明授权
US07205604B2 Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
有权
超可伸缩高速异质结垂直n沟道MISFET及其方法
- 专利标题: Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
- 专利标题(中): 超可伸缩高速异质结垂直n沟道MISFET及其方法
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申请号: US10463038申请日: 2003-06-17
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公开(公告)号: US07205604B2公开(公告)日: 2007-04-17
- 发明人: Qiqing Christine Ouyang , Jack Oon Chu
- 申请人: Qiqing Christine Ouyang , Jack Oon Chu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Robert M. Trepp
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a heterojunction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect to the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (boron) into the body. The invention reduces the problem of leakage current from the source region via the heterojunction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials.