发明授权
- 专利标题： Self-aligned implanted waveguide detector
- 专利标题（中）： 自对准植入波导检测器
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申请号： US10959897申请日： 2004-10-06
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公开(公告)号： US07205624B2公开(公告)日： 2007-04-17
- 发明人: Francisco A. Leon , Lawrence C. West
- 申请人： Francisco A. Leon , Lawrence C. West
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： WilmerHale
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.
公开/授权文献
- US20050212068A1 Self-aligned implanted waveguide detector 公开/授权日：2005-09-29
信息查询
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