发明授权
- 专利标题: Polydiode structure for photo diode
- 专利标题(中): 光电二极管的多晶硅结构
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申请号: US11017053申请日: 2004-12-21
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公开(公告)号: US07205641B2公开(公告)日: 2007-04-17
- 发明人: Yu-Da Shiu , Chyh-Yih Chang , Ming-Dou Ker , Che-Hao Chuang
- 申请人: Yu-Da Shiu , Chyh-Yih Chang , Ming-Dou Ker , Che-Hao Chuang
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Akin Gump Strauss Hauer & Feld, LLP
- 主分类号: H01L31/075
- IPC分类号: H01L31/075
摘要:
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
公开/授权文献
- US20050110060A1 Novel poly diode structure for photo diode 公开/授权日:2005-05-26
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