发明授权
- 专利标题: Semiconductor pressure sensor
- 专利标题(中): 半导体压力传感器
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申请号: US10814513申请日: 2004-04-01
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公开(公告)号: US07207226B2公开(公告)日: 2007-04-24
- 发明人: Nobuyoshi Wakasugi , Minoru Tokuhara , Keiji Horiba
- 申请人: Nobuyoshi Wakasugi , Minoru Tokuhara , Keiji Horiba
- 申请人地址: JP Kariya
- 专利权人: Denso Corporation
- 当前专利权人: Denso Corporation
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2003-100191 20030403
- 主分类号: G01L21/04
- IPC分类号: G01L21/04 ; G01L7/08
摘要:
In an ECU in which a sensor IC and various engine control devices are mounted on a board in a case, the sensor IC has a pressure sensor element covered with mold resin having a pressure introduction hole extending outward from the pressure sensor element so as to open to an outer surface thereof. A cylindrical resilient member is disposed and resiliently deformed between an inner wall of the case and the outer surface of the mold resin so as to allow a pressure introduction inlet formed in the case to communicate with the pressure introduction hole and not to communicate with places where the engine control devices are mounted. The case of ECU is fixed to a surge tank so that a pressure introduction outlet formed in the surge tank communicates directly with the pressure introduction inlet.
公开/授权文献
- US20040194550A1 Semiconductor pressure sensor 公开/授权日:2004-10-07
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