Invention Grant
- Patent Title: Method for processing residual gas
- Patent Title (中): 残余气体的处理方法
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Application No.: US10779634Application Date: 2004-02-18
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Publication No.: US07208127B2Publication Date: 2007-04-24
- Inventor: Cheng-ta Wu , Chang-Cheng Chen , Chun-Chi Chen
- Applicant: Cheng-ta Wu , Chang-Cheng Chen , Chun-Chi Chen
- Applicant Address: TW Hsinchu
- Assignee: ProMOS Technologies, Inc.
- Current Assignee: ProMOS Technologies, Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: TW8911736A 20000820
- Main IPC: B01D47/00
- IPC: B01D47/00

Abstract:
A system for processing residual gas that includes a chamber having at least one baffle for increasing gas flow path, a residual gas inlet mechanism connected to the chamber for supplying residual gas to the chamber, at least one first gas inlet mechanism connected to the chamber for supplying inert gas to the chamber, at least one second gas inlet mechanism connected to the chamber for supplying a reactive gas to the chamber, and a gas outlet mechanism for connected to the chamber for outputting mixed gases from mixing the residual gas, inert gas and reactive gas and non-reacted residual gas, inert gas and reactive gas.
Public/Granted literature
- US20040224503A1 System and method for processing residual gas Public/Granted day:2004-11-11
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