发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10995134申请日: 2004-11-24
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公开(公告)号: US07208788B2公开(公告)日: 2007-04-24
- 发明人: Masahito Hiroshima , Takashi Nishida
- 申请人: Masahito Hiroshima , Takashi Nishida
- 申请人地址: JP Tokyo
- 专利权人: Elpida Memory, Inc.
- 当前专利权人: Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Young & Thompson
- 优先权: JP2003-399996 20031128
- 主分类号: H01L29/73
- IPC分类号: H01L29/73
摘要:
A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.
公开/授权文献
- US20050116272A1 Semiconductor device and manufacturing method thereof 公开/授权日:2005-06-02
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