- 专利标题： Semiconductor integrated circuit device
-
申请号： US11228311申请日： 2005-09-19
-
公开(公告)号： US07212425B2公开(公告)日： 2007-05-01
- 发明人: Kenichi Kuroda , Toshifumi Takeda , Hisahiro Moriuchi , Masaki Shirai , Jiroh Sakaguchi , Akinori Matsuo , Shoji Yoshida
- 申请人： Kenichi Kuroda , Toshifumi Takeda , Hisahiro Moriuchi , Masaki Shirai , Jiroh Sakaguchi , Akinori Matsuo , Shoji Yoshida
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Renesas Technology Corp.,Hitachi Ulsi Systems Co., Ltd.
- 当前专利权人： Renesas Technology Corp.,Hitachi Ulsi Systems Co., Ltd.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2-184838 19900712; JP2-303118 19901108
- 主分类号： G11C17/00
- IPC分类号： G11C17/00
摘要：
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
公开/授权文献
- US20060018172A1 Semiconductor integrated circuit device 公开/授权日：2006-01-26