发明授权
- 专利标题: Method and apparatus for programming a memory array
- 专利标题(中): 用于编程存储器阵列的方法和装置
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申请号: US11158396申请日: 2005-06-22
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公开(公告)号: US07212454B2公开(公告)日: 2007-05-01
- 发明人: Bendik Kleveland , Tae Hee Lee , Seung Geon Yu , Chia Yang , Feng Li , Xiaoyu Yang
- 申请人: Bendik Kleveland , Tae Hee Lee , Seung Geon Yu , Chia Yang , Feng Li , Xiaoyu Yang
- 申请人地址: US CA Sunnyvale
- 专利权人: SanDisk 3D LLC
- 当前专利权人: SanDisk 3D LLC
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Brinks Hofer Gilson & Lione
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.
公开/授权文献
- US20060291303A1 Method and apparatus for programming a memory array 公开/授权日:2006-12-28
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