发明授权
- 专利标题： Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
- 专利标题（中）： 辐射检测装置及其制造方法以及放射线摄像系统
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申请号： US10455457申请日： 2003-06-06
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公开(公告)号： US07214945B2公开(公告)日： 2007-05-08
- 发明人: Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki
- 申请人： Keiichi Nomura , Masakazu Morishita , Chiori Mochizuki
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2002-170127 20020611; JP2002-170128 20020611
- 主分类号： G01J1/00
- IPC分类号： G01J1/00
摘要：
A radiation detecting apparatus having a radiation conversion element arranged on a switch TFT is provided. The apparatus includes a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are arranged on the gate electrode in order; and a source/drain electrode of the switch TFT arranged on the ohmic contact layer, which all constitute the switch TFT. The apparatus also includes a lower electrode of the radiation conversion element formed from the same layer as the source/drain electrode, a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are arranged on the lower electrode in order, and a bias wiring for applying a bias voltage to the radiation conversion element.
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