发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10969429申请日： 2004-10-21
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公开(公告)号： US07217654B2公开(公告)日： 2007-05-15
- 发明人: Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
- 申请人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
- 申请人地址： JP Kanagawa
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2001-361112 20011127; JP2002-340160 20021122
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
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