发明授权
US07217668B2 Gate technology for strained surface channel and strained buried channel MOSFET devices
有权
用于应变表面通道和应变埋入通道MOSFET器件的栅极技术
- 专利标题： Gate technology for strained surface channel and strained buried channel MOSFET devices
- 专利标题（中）： 用于应变表面通道和应变埋入通道MOSFET器件的栅极技术
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申请号： US11013838申请日： 2004-12-16
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公开(公告)号： US07217668B2公开(公告)日： 2007-05-15
- 发明人: Eugene A. Fitzgerald , Richard Hammond , Matthew Currie
- 申请人： Eugene A. Fitzgerald , Richard Hammond , Matthew Currie
- 申请人地址： US NH Salem
- 专利权人： AmberWave Systems Corporation
- 当前专利权人： AmberWave Systems Corporation
- 当前专利权人地址： US NH Salem
- 代理机构： Goodwin Procter, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/336
摘要：
A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si1-xGex layer on a substrate, a strained channel layer on the relaxed Si1-xGex layer, and a Si1-yGey layer; removing the Si1-yGey layer; and providing a dielectric layer. The dielectric layer includes a gate dielectric of a MISFET. In alternative embodiments, the heterostructure includes a SiGe spacer layer and a Si layer.
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