Invention Grant
- Patent Title: Metal-insulator-metal capacitor and interconnecting structure
- Patent Title (中): 金属绝缘体 - 金属电容器和互连结构
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Application No.: US10901239Application Date: 2004-07-29
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Publication No.: US07220652B2Publication Date: 2007-05-22
- Inventor: Yoon-hae Kim , Kyung-tae Lee , Seong-ho Liu
- Applicant: Yoon-hae Kim , Kyung-tae Lee , Seong-ho Liu
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2003-0052398 20030729
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of manufacturing a MIM capacitor and a interconnecting structure using a damascene process. The MIM capacitor and the first interconnecting structure can be formed at equal depths.
Public/Granted literature
- US20050024979A1 Metal-insulator-metal capacitor and interconnecting structure Public/Granted day:2005-02-03
Information query
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