发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11047603申请日： 2005-02-02
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公开(公告)号： US07221030B2公开(公告)日： 2007-05-22
- 发明人: Hitoshi Saito
- 申请人： Hitoshi Saito
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2002-255471 20020830
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.
公开/授权文献
- US20050127456A1 Semiconductor device and method of fabricating the same 公开/授权日：2005-06-16
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