Invention Grant
US07223662B2 Method of forming an epitaxial layer for raised drain and source regions by removing surface defects of the initial crystal surface
有权
通过去除初始晶体表面的表面缺陷来形成用于凸起的漏极和源极区的外延层的方法
- Patent Title: Method of forming an epitaxial layer for raised drain and source regions by removing surface defects of the initial crystal surface
- Patent Title (中): 通过去除初始晶体表面的表面缺陷来形成用于凸起的漏极和源极区的外延层的方法
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Application No.: US11082122Application Date: 2005-03-16
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Publication No.: US07223662B2Publication Date: 2007-05-29
- Inventor: Thorsten Kammler , Scott Luning , Linda Black
- Applicant: Thorsten Kammler , Scott Luning , Linda Black
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102004031743 20040630
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/44 ; H01L21/302 ; H01L21/461
Abstract:
By substantially amorphizing a selectively epitaxially grown silicon layer used for forming a raised drain and source region and a portion of the underlying substrate, or just the surface region of the substrate (prior to growing the silicon overlayer), the number of interface defects located between the grown silicon layer and the initial substrate surface may be significantly reduced. Consequently, deleterious effects such as charge carrier gettering or creating diffusion paths for dopants may be suppressed.
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