Invention Grant
US07223676B2 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer 失效
具有独立可变共形性,应力和CVD层组成的极低温CVD工艺

Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
Abstract:
A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.
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