发明授权
US07223677B2 Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
有权
一种制造半导体器件的方法，该半导体器件具有在半导体衬底上形成的绝缘层
- 专利标题： Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
- 专利标题（中）： 一种制造半导体器件的方法，该半导体器件具有在半导体衬底上形成的绝缘层
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申请号： US10876183申请日： 2004-06-24
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公开(公告)号： US07223677B2公开(公告)日： 2007-05-29
- 发明人: Martin Michael Frank , Yves Chabal , Glen David Wilk , Martin L. Green
- 申请人： Martin Michael Frank , Yves Chabal , Glen David Wilk , Martin L. Green
- 申请人地址： US PA Allentown
- 专利权人： Agere Systems, Inc.
- 当前专利权人： Agere Systems, Inc.
- 当前专利权人地址： US PA Allentown
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.